Effects of high- k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey
Taouririt, Taki Eddine, Meftah, Afak, Sengouga, Nouredine, Adaika, Marwa, Chala, Slimane, Meftah, AmjadVolume:
11
Year:
2019
Journal:
Nanoscale
DOI:
10.1039/c9nr03395e
File:
PDF, 8.03 MB
2019