Sub-60 mV per decade switching in ion-gel-gated In–Sn–O transistors with a nano-thick charge trapping layer
Liu, Wanrong, Sun, Jia, Qiu, Weijie, Chen, Yang, Huang, Yulong, Wang, Juxiang, Yang, JunliangVolume:
11
Year:
2019
Journal:
Nanoscale
DOI:
10.1039/c9nr06641a
File:
PDF, 2.63 MB
2019