Meandering Gate Edges for Breakdown Voltage Enhancement in...

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physica status solidi (a) 2020 / 01

Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN HEMTs

Kumar, Sandeep, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy Neelim
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Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201900766
Date:
January, 2020
File:
PDF, 505 KB
2020
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