300°C GaN/AlGaN Heterojunction Bipolar Transistor

MRS Internet Journal of Nitride Semiconductor Research 1998 Vol. 3

300°C GaN/AlGaN Heterojunction Bipolar Transistor

Ren, Fan, Abernathy, Cammy R., Van Hove, J. M., Chow, P. P., Hickman, R., Klaasen, JJ, Kopf, R. F., Cho, Hyun, Jung, K. B., La Roche, J. R., Wilson, R. G., Han, J., Shul, R. J., Baca, A. G., Pearton,
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Volume:
3
Year:
1998
Journal:
MRS Internet Journal of Nitride Semiconductor Research
DOI:
10.1557/S1092578300001137
File:
PDF, 124 KB
1998
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