Random telegraph noise in gate-all-around silicon nanowire...

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Journal of Computational Electronics 2020 / 1

Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps

Kola, Sekhar Reddy, Li, Yiming, Thoti, Narasimhulu
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Journal:
Journal of Computational Electronics
DOI:
10.1007/s10825-019-01438-9
Date:
January, 2020
File:
PDF, 3.54 MB
2020
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