First-principles calculations of defect formation energy...

Computational Materials Science 2020 / 02 Vol. 173

First-principles calculations of defect formation energy and carrier concentration of Ti4+, Ta5+ and W6+ doped KSr2Nb5O15

Chen, Qian, Zhang, Ruizhi, Xu, Jie, Cao, Shuyao, Guo, Yiting, Li, Yangping, Gao, Feng
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Volume:
173
Journal:
Computational Materials Science
DOI:
10.1016/j.commatsci.2019.109427
Date:
February, 2020
File:
PDF, 2.18 MB
2020
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