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First-principles calculations of defect formation energy and carrier concentration of Ti4+, Ta5+ and W6+ doped KSr2Nb5O15
Chen, Qian, Zhang, Ruizhi, Xu, Jie, Cao, Shuyao, Guo, Yiting, Li, Yangping, Gao, FengVolume:
173
Journal:
Computational Materials Science
DOI:
10.1016/j.commatsci.2019.109427
Date:
February, 2020
File:
PDF, 2.18 MB
2020