Improved resistive switching behavior of multiwalled carbon...

Materials Science in Semiconductor Processing 2020 / 03 Vol. 108

Improved resistive switching behavior of multiwalled carbon nanotube/TiO2 nanorods composite film by increased oxygen vacancy reservoir

Mullani, Navaj, Ali, Ijaz, Dongale, Tukaram D., Kim, Gun Hwan, Choi, Byung Joon, Basit, Muhammad Abdul, Park, Tae Joo
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Volume:
108
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2019.104907
Date:
March, 2020
File:
PDF, 2.01 MB
2020
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