Al 0.75 Ga 0.25...

IEEE Journal of the Electron Devices Society 2020 Vol. 8

Al 0.75 Ga 0.25 N/Al x Ga 1-x N/Al 0.75 Ga 0.25 N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

Lee, Ching-Sung, Shen, Yan-Ting, Hsu, Wei-Chou, Huang, Yi-Ping, You, Cheng-Yang
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Volume:
8
Year:
2020
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2019.2956497
File:
PDF, 2.09 MB
2020
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