Corrections to “600 V 4H-SiC MOSFETs Fabricated in...

IEEE Electron Device Letters 2020 / 1 Vol. 41; Iss. 1

Corrections to “600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V”

Agarwal, Aditi, Han, Kijeong, Jayant Baliga, B.
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Volume:
41
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2956966
Date:
January, 2020
File:
PDF, 243 KB
2020
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