A TCAD Study on Lateral Power MOSFET with Dual Conduction...

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IEEE Electron Device Letters 2020

A TCAD Study on Lateral Power MOSFET with Dual Conduction Paths and High-k Passivation

Cheng, Junji, Huang, Haimeng, Yi, Bo, Zhang, Weijia, Ng, Wai Tung
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Year:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2963299
File:
PDF, 2.77 MB
2020
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