![](/img/cover-not-exists.png)
Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures
L. G. Lavrent’eva, M. D. Vilisova, I. A. Bobrovnikova, S. E. Toropov, V. V. Preobrazhenskii, B. R. Semyagin, M. A. Putyato, V. V. ChaldyshevVolume:
45
Language:
english
Pages:
1
DOI:
10.1007/s10947-006-0100-7
Date:
January, 2004
File:
PDF, 449 KB
english, 2004