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A comprehensive structural analysis of silicon carbide layers grown by vacuum epitaxy on silicon from hydrides and hydrocarbons
L. K. Orlov, Yu. N. Drozdov, M. N. Drozdov, O. A. Pod’yacheva, V. I. VdovinVolume:
51
Language:
english
Pages:
7
DOI:
10.1007/s10947-010-0204-y
Date:
December, 2010
File:
PDF, 280 KB
english, 2010