Strongly reduced V pit density on InGaNOS substrate by...

Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice

Dussaigne, A., Barbier, F., Samuel, B., Even, A., Templier, R., Lévy, F., Ledoux, O., Rozhavskaia, M., Sotta, D.
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Volume:
533
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2020.125481
Date:
March, 2020
File:
PDF, 1.75 MB
english, 2020
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