Solution-processed Pb0.8Ba0.2ZrO3 as a gate dielectric for...

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Emergent Materials 2020 / 1

Solution-processed Pb0.8Ba0.2ZrO3 as a gate dielectric for low-voltage metal-oxide thin-film transistor

Acharya, Vishwas, Sharma, Anand, Chourasia, Nitesh K., Pal, Bhola N.
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Language:
english
Journal:
Emergent Materials
DOI:
10.1007/s42247-019-00065-1
Date:
January, 2020
File:
PDF, 905 KB
english, 2020
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