Synthesis and growth of 6H-SiC and 3C-SiC in Al-Si-C system...

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Crystal Growth & Design 2020 / 01

Synthesis and growth of 6H-SiC and 3C-SiC in Al-Si-C system at 820˚C: Effect of reaction path on SiC polytype

Wu, Chongchong, Gao, Tong, Nie, Jinfeng, Liu, Xiangfa
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Language:
english
Journal:
Crystal Growth & Design
DOI:
10.1021/acs.cgd.9b01394
Date:
January, 2020
File:
PDF, 1.38 MB
english, 2020
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