Inductively Coupled Plasma Chemical Vapor Deposition for...

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Inductively Coupled Plasma Chemical Vapor Deposition for Silicon‐Based Technology Compatible with Low‐Temperature (≤220 °C) Flexible Substrates

Yang, Kai, De Sagazan, Olivier, Pichon, Laurent, Salaün, Anne-Claire, Coulon, Nathalie
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Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201900556
Date:
January, 2020
File:
PDF, 857 KB
2020
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