Lateral Heterostructure Field-Effect Transistors Based on...

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ACS Nano 2020 / 01

Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks with Varying Thickness and Energy Filtering Source

Marin, Enrique G, Marian, Damiano, Perucchini, Marta, Fiori, Gianluca, Iannaccone, Giuseppe
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Language:
english
Journal:
ACS Nano
DOI:
10.1021/acsnano.9b08489
Date:
January, 2020
File:
PDF, 6.31 MB
english, 2020
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