Highly enhanced performance for sensing by monolayer 1T’...

Microelectronic Engineering 2020 / 02 Vol. 223

Highly enhanced performance for sensing by monolayer 1T’ WS2 with atomic vacancy

Wang, Weiqi, Cao, Jiamu, Zhou, Jing, Chen, Junyu, Liu, Junfeng, Deng, Huichao, Zhang, Yufeng, Liu, Xiaowei
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Volume:
223
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2020.111215
Date:
February, 2020
File:
PDF, 1.35 MB
english, 2020
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