High Performance Flexible Organic Field-Effect Transistors...

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ACS Applied Electronic Materials 2020 / 01

High Performance Flexible Organic Field-Effect Transistors with Barium Strontium Titanate Gate Dielectric Deposited at Room Temperature

Raghuwanshi, Vivek, Bharti, Deepak, Mahato, Ajay Kumar, Shringi, Amit Kumar, Varun, Ishan, Tiwari, Shree Prakash
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Language:
english
Journal:
ACS Applied Electronic Materials
DOI:
10.1021/acsaelm.9b00779
Date:
January, 2020
File:
PDF, 2.16 MB
english, 2020
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