Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic...

ETRI Journal 2019 / 12 Vol. 41; Iss. 6

Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime

Yu, Eunseon, Son, Baegmo, Kam, Byungmin, Joh, Yong Sang, Park, Sangjoon, Lee, Won‐Jun, Jung, Jongwan, Cho, Seongjae
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Volume:
41
Language:
english
Journal:
ETRI Journal
DOI:
10.4218/etrij.2018-0281
Date:
December, 2019
File:
PDF, 1.17 MB
english, 2019
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