Size control of GaN nanocrystals formed by ion implantation in thermally grown silicon dioxide
Filintoglou, K., Pinakidou, F., Arvanitidis, J., Christofilos, D., Paloura, E. C., Ves, S., Kutza, P., Lorenz, Ph., Gerlach, P., Wendler, E., Undisz, A., Rettenmayr, M., Milchanin, O., Komarov, F. F.,Volume:
127
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5132604
Date:
January, 2020
File:
PDF, 3.77 MB
english, 2020
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