Multi-channel AlGaN/GaN in-plane-gate field-effect...

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IEEE Electron Device Letters 2020

Multi-channel AlGaN/GaN in-plane-gate field-effect transistors

Erine, Catherine, Ma, Jun, Santoruvo, Giovanni, Matioli, Elison
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Year:
2020
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.2967458
File:
PDF, 860 KB
english, 2020
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