Lateral 2D WSe 2 p–n...

Advanced Materials 2020 / 01

Lateral 2D WSe 2 p–n Homojunction Formed by Efficient Charge‐Carrier‐Type Modulation for High‐Performance Optoelectronics

Sun, Jiacheng, Wang, Yuyan, Guo, Shaoqiang, Wan, Bensong, Dong, Lianqing, Gu, Youdi, Song, Cheng, Pan, Caofeng, Zhang, Qinghua, Gu, Lin, Pan, Feng, Zhang, Junying
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Language:
english
Journal:
Advanced Materials
DOI:
10.1002/adma.201906499
Date:
January, 2020
File:
PDF, 5.17 MB
english, 2020
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