Fabrication and characterization of Au/n-type InP Schottky...

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Semiconductor Science and Technology 2020 / 01

Fabrication and characterization of Au/n-type InP Schottky barrier diode with monolayer graphene interlayer

Cimilli Çatır, Fulya Esra
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab6bb4
Date:
January, 2020
File:
PDF, 1.11 MB
english, 2020
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