Low–Frequency Noise in Vertically Stacked Si n–Channel...

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IEEE Electron Device Letters 2020

Low–Frequency Noise in Vertically Stacked Si n–Channel Nanosheet FETs

De Oliveira, Alberto V., Veloso, Anabela, Claeys, Cor, Horiguchi, Naoto, Simoen, Eddy
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Year:
2020
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.2968093
File:
PDF, 1022 KB
english, 2020
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