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[IEEE 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2019.11.14-2019.11.15)] 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Sub-gap defect states in back-channel-etched amorphous In-Ga-Zn-O TFTs studied by photoinduced transient spectroscopy
Hayashi, Kazushi, Ochi, MototakaYear:
2019
Language:
english
DOI:
10.1109/IMFEDK48381.2019.8950708
File:
PDF, 283 KB
english, 2019