Bias stress and humidity exposure of amorphous InGaZnO...

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Journal of Physics D Applied Physics 2020 / 01

Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200°C

Corsino, Dianne C., Bermundo, Juan Paolo, Fujii, Mami N., Takahashi, Kiyoshi, Ishikawa, Yasuaki, Uraoka, Yukiharu
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Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/ab6e97
Date:
January, 2020
File:
PDF, 902 KB
2020
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