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Selective area epitaxy of n + -GaN layers on SiO 2 patterned GaN/c-Al 2 O 3 templates by PA MBE
Shubina, K Yu, Mizerov, A M, Timoshnev, S N, Mokhov, D V, Nikitina, E V, Kim, I, Bouravleuv, A DVolume:
1410
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/1410/1/012014
Date:
December, 2019
File:
PDF, 987 KB
2019