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The effect of high resistivity AlOδ layer on low-power consumption of TaOx based resistive switching memory
Zhao, Jin Shi, Wang, Chen, Yan, Yu, Chen, Yu Ting, Sun, Wen Tao, Li, Jun Ye, Wang, Xiang Yu, Mi, Wei, Song, Dian You, Zhou, Li WeiVolume:
174
Language:
english
Journal:
Vacuum
DOI:
10.1016/j.vacuum.2020.109186
Date:
April, 2020
File:
PDF, 1.03 MB
english, 2020