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Determination of dislocation density in GaN/sapphire layers using XRD measurements carried out from the edge of the sample
Serafinczuk, J., Moszak, K., Pawlaczyk, L., Olszewski, W., Pucicki, D., Kudrawiec, R., Hommel, D.Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2020.153838
Date:
January, 2020
File:
PDF, 3.80 MB
2020