Influence of channel thickness on charge transport behavior...

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2D Materials 2020 / 01

Influence of channel thickness on charge transport behavior of multi-layer indium selenide (InSe) field-effect transistors

Wasala, Milinda, Patil, Prasanna D., Ghosh, Sujoy, Alkhaldi, Rana, Weber, Lincoln, Lei, Sidong, Vajtai, Robert, Ajayan, Pulickel M, Talapatra, Saikat
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Journal:
2D Materials
DOI:
10.1088/2053-1583/ab6f79
Date:
January, 2020
File:
PDF, 587 KB
2020
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