Normally-off β-Ga2O3 Power MOSFET with Ferroelectric...

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IEEE Electron Device Letters 2020

Normally-off β-Ga2O3 Power MOSFET with Ferroelectric Charge Storage Gate Stack Structure

Feng, Zhaoqing, Feng, Qian, Zhou, Hong, Zhang, Jincheng, Hao, Yue, Tian, Xusheng, Li, Zhe, Hu, Zhuangzhuang, Zhang, Yanni, Kang, Xuanwu, Ning, Jing, Zhang, Yachao, Zhang, Chunfu
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Year:
2020
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.2970066
File:
PDF, 3.51 MB
english, 2020
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