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Minority-electron transport through atomic-diffusion-bonded InGaAs/a-Ge/InGaAs structure studied by photodiode characterization
Yamada, Yuki, Nada, Masahiro, Uomoto, Miyuki, Shimatsu, Takehito, Nakajima, Fumito, Hoshi, Takuya, Matsuzaki, HideakiVolume:
59
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab5c65
Date:
January, 2020
File:
PDF, 757 KB
english, 2020