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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Relaxed InGaN engineered substrates with lattice parameter of 3,205A and beyond enabling direct emission at 630nm
Guiot, Eric, Sotta, David, Ledoux, Olivier, Lagrange, Melanie, Lavaitte, Guillaume, Dussaigne, Amelie, Chenot, Sebastien, Damilano, BenjaminYear:
2019
Language:
english
DOI:
10.1109/iciprm.2019.8819265
File:
PDF, 1.13 MB
english, 2019