Thermally activated discharging mechanisms in SiNx films...

Microelectronic Engineering 2020 / 02 Vol. 223

Thermally activated discharging mechanisms in SiNx films with embedded CNTs for RF MEMS capacitive switches

Koutsoureli, M., Stavrinidis, G., Birmpiliotis, D., Konstantinidis, G., Papaioannou, G.
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Volume:
223
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2020.111230
Date:
February, 2020
File:
PDF, 1.27 MB
english, 2020
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