Detailed analysis of radiative transitions from defects in...

Detailed analysis of radiative transitions from defects in n-type monocrystalline silicon using temperature- and light intensity-dependent spectral Photoluminescence

Chin, Robert (μRob) Lee, Pollard, Michael, Zhu, Yan, Hameiri, Ziv
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Volume:
208
Language:
english
Journal:
Solar Energy Materials and Solar Cells
DOI:
10.1016/j.solmat.2019.110376
Date:
May, 2020
File:
PDF, 2.46 MB
english, 2020
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