Selective annealing of Al2O3/silicon interface by using an...

Materials Science in Semiconductor Processing 2020 / 04 Vol. 109

Selective annealing of Al2O3/silicon interface by using an Nd3+: YAG laser with a wavelength of 532 nm

Jung, Sang Min, Park, Chul Jin, Kim, Jin Hwan, Shin, Moo Whan
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
109
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2020.104956
Date:
April, 2020
File:
PDF, 1.65 MB
2020
Conversion to is in progress
Conversion to is failed