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Selective annealing of Al2O3/silicon interface by using an Nd3+: YAG laser with a wavelength of 532Â nm
Jung, Sang Min, Park, Chul Jin, Kim, Jin Hwan, Shin, Moo WhanVolume:
109
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2020.104956
Date:
April, 2020
File:
PDF, 1.65 MB
2020