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Total-Ionizing-Dose Effects and Low-Frequency Noise in...

IEEE Transactions on Nuclear Science 2020 / 1 Vol. 67; Iss. 1

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO 2 /HfO 2 Gate Dielectrics

Gorchichko, Mariia, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Linten, Dimitri, Cao, Yanrong, Zhang, En Xia, Yan, Dawei, Gong, Huiqi, Zhao, Simeng E., Wang, Pan, Jiang, Rong, Liang, C
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Volume:
67
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2019.2960815
Date:
January, 2020
File:
PDF, 3.96 MB
2020
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