[IEEE 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) - Nashville, TN, USA (2019.11.3-2019.11.6)] 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) - Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and Modeling
Khandelwal, Sourabh, Kellogg, Kevin, Hill, Cole, Morales, Hugo, Dunleavy, Larry, Drandova, Gergana, Pacheco, Anita, Jimenez, JoseYear:
2019
DOI:
10.1109/BCICTS45179.2019.8972721
File:
PDF, 1.62 MB
2019