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Low Equivalent Oxide Thickness and Leakage Current of pGe MOS Device by Removing Low Oxidation State in GeOx with H2 Plasma Treatment
Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Yi, Shih-Han, Yeh, Hsin-I, Liu, Guan-TingYear:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.2971635
File:
PDF, 6.02 MB
2020