[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - A Fully Integrated Low Voltage DRAM with Thermally Stable Gate-first High-k Metal Gate Process
Jang, Sung Ho, Yamada, Satoru, Lee, Kyupil, Lim, Junhee, Han, Joon, Jang, Juyeon, Yeo, Jaehyun, Lee, Chanmin, Baek, Sungkweon, Lee, Jaehoon, Lee, Jong-HoYear:
2019
DOI:
10.1109/IEDM19573.2019.8993517
File:
PDF, 1.76 MB
2019