TID effects on I–V characteristics of bulk CMOS STD and...

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Microelectronics Journal 2020 / 2

TID effects on I–V characteristics of bulk CMOS STD and ELT-based devices in 600 nm

Vaz, Pablo I., Wirth, Gilson I., Vidor, Fábio F., Both, Thiago H.
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Journal:
Microelectronics Journal
DOI:
10.1016/j.mejo.2020.104722
Date:
February, 2020
File:
PDF, 8.78 MB
2020
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