Investigation of nitride lateral Schottky barrier diodes...

AIP Advances 2020 / 01 Vol. 10; Iss. 1

Investigation of nitride lateral Schottky barrier diodes based on InGaN channel heterostructures

Zhang, Yachao, Wang, Zhizhe, Zhao, Shenglei, Xu, Shengrui, Zhang, Jincheng, Hao, Yue
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Volume:
10
Journal:
AIP Advances
DOI:
10.1063/1.5129112
Date:
January, 2020
File:
PDF, 2.21 MB
2020
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