[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Impact of the insertion of AlGaN back barrier on crystal quality, $\boldsymbol{N}_{\mathbf{S}}$, and mobility of GaN-channel HEMTs with high-Al-content AlGaN top barrier grown on high-resistivity Si substrate
Hoshi, Takuya, Sugiyama, Hiroki, Nakajima, Fumito, Matsuzaki, HideakiYear:
2019
DOI:
10.1109/ICIPRM.2019.8819028
File:
PDF, 8.89 MB
2019