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[IEEE 2019 19th Non-Volatile Memory Technology Symposium (NVMTS) - Durham, NC, USA (2019.10.28-2019.10.30)] 2019 19th Non-Volatile Memory Technology Symposium (NVMTS) - Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications
Seidel, K., Biedermann, K., Houdt, J. Van, Ali, T., Hoffmann, R., Kuhnel, K., Czernohorsky, M., Rudolph, M., Patzold, B., Steinke, P., Zimmermann, K.Year:
2019
DOI:
10.1109/NVMTS47818.2019.8986166
File:
PDF, 1.06 MB
2019