Analysis of trap and recovery characteristics based on low-frequency noise for E-mode GaN HEMTs with p-GaN gate under repetitive short-circuit stress
Xu, X B, Li, B, Chen, Y Q, Wu, Z H, He, Z Y, En, Y F, Huang, YVolume:
53
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/ab713a
Date:
April, 2020
File:
PDF, 2.60 MB
2020