Surface Potential Based Analytical Model for InGaZnO...

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Chinese Physics B 2020 / 02

Surface Potential Based Analytical Model for InGaZnO Thin-Film Transistors with Independent Dual-Gates

He, Yi-Ni, Deng, Lian-Wen, Qin, Ting, Liao, Cong-Wei, Luo, Heng, Huang, Sheng-Xiang
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Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/ab75d2
Date:
February, 2020
File:
PDF, 732 KB
2020
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