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[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage
Ali, T., Olivo, R., Lederer, M., Hoffmann, R., Steinke, P., Zimmermann, K., Muhle, U., Seidel, K., Muller, J., Polakowski, P., Kuhnel, K., Czernohorsky, M., Kampfe, T., Rudolph, M., Patzold, B., LehniYear:
2019
DOI:
10.1109/iedm19573.2019.8993642
File:
PDF, 12.46 MB
2019