Origin and anomalous behavior of dominant defects in 4H-SiC...

Journal of Applied Physics 2020 / 02 Vol. 127; Iss. 6

Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy

Gelczuk, Ł., Dąbrowska-Szata, M., Kolkovsky, Vl., Sochacki, M., Szmidt, J., Gotszalk, T.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
127
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5140731
Date:
February, 2020
File:
PDF, 848 KB
english, 2020
Conversion to is in progress
Conversion to is failed