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Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy
Gelczuk, Å., DÄ browska-Szata, M., Kolkovsky, Vl., Sochacki, M., Szmidt, J., Gotszalk, T.Volume:
127
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5140731
Date:
February, 2020
File:
PDF, 848 KB
english, 2020