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[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)
Convertino, C., Moselund, K. E., Zota, C. B., Baumgartner, Y., Staudinger, P., Sousa, M., Mauthe, S., Caimi, D., Czornomaz, L., Ionescu, A. M.Year:
2019
Language:
english
DOI:
10.1109/IEDM19573.2019.8993610
File:
PDF, 3.58 MB
english, 2019